唐明华导师主页
基本信息
姓名: 唐明华
职称: 教授
单位电话: 0731-58292200(O
电子信箱: tangminghua@xtu.edu.cn
办公室: 物理楼A-508#
个人主页:
http://yjs.xtu.edu.cn/gmis/dsgl/dsfc.aspx?id=8926CEAEB226B0BCA0F178F8A62A5320
个人简介

  

      唐明华,男,党员,工学博士/教授,博士生导师,湖南省普通高校学科带头人(微电子学与固体电子学),韶峰学者。1988年7月毕业于湘潭大学物理系无线电物理专业。2003年9月至2004年9月在清华大学微电子研究所学习微电子专业课程,熟悉集成电路设计、制造和测试的基本原理及工艺方法。2007年获湘潭大学材料物理与化学专业微电子材料与器件方向博士学位。2008年8月至2009年8月日本东京工业大学(Research Lab. of Advanced Integrated Electronics of the Department of Electronics and Applied Physics, TIT)高级访问学者,参与由TIT、Fujitsu公司和Toshima公司联合资助的铁电存储器(65nm半导体技术工艺)的研发工作。2011年6月至2011年9月受国家留学基金资助到新加坡南洋理工大学(Nanyang Technology University & A*STAR)做高级访问学者。IEEE会员,中国材料学会高级会员,湖南省核学会副理事长。Nano Letters、Applied Physics Letters、IEEE Electron Devices Letters、IEEE Transactions on Electron Devices、The IEEE Transactions on Very Large Scale Integration (VLSI) Systems、RSC Advances、Materials Research Bulletin、Microelectronics Reliability等19余种国际期刊审稿人。湘潭大学“材料与器件”首批国家级教学团队(教高函[2007]23号)、“低维材料与器件力学”湖南省首批自然科学创新研究群体(2009年)和“薄膜材料及其器件力学”教育部创新团队(2011年)核心成员,湘潭市专业技术骨干人才(第五批) (潭市发[2012] 24号)。  

  主持国家自然科学基金项目、湖南省自然科学基金重点项目、留学回国人员科研启动基金项目、高等学校博士学科点专项科研基金(博导类)项目、湖南省教育厅重点项目等17项;作为主要成员或实际完成人,参与高等学校科技创新工程重大项目培育资金项目、国家自然科学基金项目重点项目、国家自然科学基金项目、973预研项目、国防科工局XXX项目、总装备部XXX探索项目等15项。 

       近年来,在Advanced Materilas、Applied Physics Letters、Nanotechnology、IEEE Journal of Solid-State Circuits、The IEEE Transactions on Very Large Scale Integration (VLSI) Systems、IEEE Transactions on Electron Devices、IEEE Transactions on Nuclear Science、Microelectronics Reliability、Microelectronic Engineering等国内外著名刊物上发表  SCI收录学术论文141余篇,研究成果得到国内外同行的高度关注,分别被Science、Nature Materials等国际著名期刊引用[如:Science, 327 (2010), 1106-1110);Nature Materials, 7 (2008), 425-426;Nature Communictions, 5 (2014), 4693等],至2015年12月,论文被引用1075次 (其中他引1021次,单篇论文他引最高为98次)。多次参加在美国、英国、法国、澳大利亚、日本、韩国、香港、北京等地举行的国际学术交流活动,并做学术报告30余次。

研究方向

  1. 铁电薄膜存储器(FeRAM/FeFET)、阻变存储器(RRAM)、多铁隧道结及器件

  2. 磁电超晶格薄膜及相关器件

  3. 集成电路设

科研项目

主持的科研项目:

1.  2015.01-2018.12,基于自旋极化多铁隧道结的多值存储研究,国家自然科学基金面上项目(51472210)。

2.  2013.01-2016.12,铁电栅场效应晶体管存储器的单粒子效应研究,国家自然科学基金面上项目(61274107)。

3.  2011.01-2013.12,LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制,国家自然科学基金面上项目(51072171)。

4.  2009.01-2011.12,无铅铁电薄膜场效应晶体管的保持性能,国家自然科学基金面上项目(60876054)。

5.  2011.01-2011.12,2011年中日铁电材料及其应用会议,国家自然科学基金项目(5111030506)。

6.  2013.01-2015.12,八逻辑态高密度铁电存储器的机理及实验研究,湖南省自然科学基金重点项目(13JJ2023)。

7.  2012.09-2015.12,铁电栅场效应晶体管存储器的单粒子效应研究,湖南省教育厅重点项目(12A129)。

8.  2011.01-2013.12,“湖南省普通高校学科带头人培养对象”专项,湖南省教育厅(湘教通[2011]388号)。

9.  2011.01-2013.12,铁电场效应晶体管的保持性能与界面调控的关联性研究,高等学校博士学科点专项科研基金(博导类) (20104301110001)。

10. 2010.01-2012.12,大面积高品质磁电超晶格复合薄膜的PLD法制备及磁电效应研究,第38批“留学回国人员科研启动基金”项目(教外司留[2010]609号)。

11. 2011.01-2013.12,铁电薄膜场效应晶体管的保持性能与界面调控,湖南省科技厅科研项目(2010FJ3029)。

12. 2008.01-2010.12,非破坏性读出无铅铁电薄膜场效应晶体管的制备及电学性能,湖南省自然科学基金重点项目(08JJ3122)。

13. 2012.10-2014.10,基于铁电栅场效应晶体管的FeCMOS逻辑电路的SET效应研究,强脉冲辐射环境模拟与效应国家重点实验室开放课题。

14.  2013.09-2015.09,铁电栅场效应晶体管存储器的单粒子效应研究,电子元器件可靠性物理及其应用技术重点实验室开放课题(ZHD201304)。

15. 2016.06-2018.06,铁电栅石墨烯场效应晶体管的制备及总剂量辐射效应研究,强脉冲辐射环境模拟与效应国家重点实验室开放课题。

作为主要成员或实际完成人参与的科研项目:

1.  2014.10-2017.09,面向太赫兹XXX的新型硅基信号预处理器件,总装备部XXX探索研究项目,排名第2。

2.  2012.08-2014.08,FeCMOS基本门电路的辐照效应及机理研究,科技部973计划前期研究专项(2012CB326404),排名第2。

3.  2012.09-2015.06,XXX用高性能无铅铁电薄膜,国防科工局XXX项目(XXXX-XXX),排名第2。

4.  2009.01-2011.12,低维材料及其器件力学湖南省创新群体(09JJ7004),核心成员。

5.  2011.01-2013.12,薄膜材料及其器件力学教育部创新团队(IRT1080),核心成员。

6.  2005.01-2007.12,铋层状钙钛矿铁电薄膜的制备及其热冲击下断裂失效行为,国家自然科学基金项目(10472099),排名第4。

7.  2005.01-2007.12,无铅铁电薄膜及其纳米薄膜微器件,湖南省科技厅重点项目(05FJ2005),排名第3。

8.  2006.01-2008.12,基于晶体缺陷的铁电材料介观理论及实验表征:电畴结构和界面效应,国家自然科学基金项目(10572124),排名第4。

9.  2007.01-2009.12,无铅铁电薄膜及存储器的制备和失效行为,高等学校科技创新工程重大项目培育资金项目(076044),排名第7。

10. 2008.01-2011.12,微纳电子材料及器件的力、电、热耦合破坏理论和实验研究,国家自然科学基金重点项目(10732100),排名第6。 

科研成果

代表性论文:

[45] W. L. Zhang, M. H. Tang*, Y. Xiong, K. Wang, Z. P. Wang, Y. G. Xiao, S. A. Yan, Z. Li and J. He. Improvement of the nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with various temperature annealed Bi4Ti3O12 seeding layer. RSC Advances, 6 (2016) 88668-88673.

[44] Y. G. Xiao, D. B. Ma, J. Wang, G. Li, S. A. Yan, W. L. Zhang, Z. Li and M. H. Tang. An improved model for the surface potential and drain current in negative capacitance field effect transistors. RSC Advances, 6 (2016) 103210-103214.

[43] Feng Yang, Yichen Guo, Luyan Li and Minghua Tang. Anisotropic polarization fatigue in Bi3.15Nd0.85Ti3O12 thin films. Journal of Physics D: Applied Physics, 49 (19) (2016) 195305 (7pp).

[42] S. A. Yan, G. Li, W. Zhao, H. X. Guo, Y. Xiong, M. H. Tang*, Z. Li, Y. G. Xiao, W. L. Zhang, and Z. F. Lei. Ionizing radiation effect on ferroelectric field-effect transistor. Japanese Journal of Applied Physics, 55 (2016) 048001.

[41] S. A. Yan, W. Zhao, H. X. Guo, Y. Xiong, M. H. Tang*, Zheng Li, Y. G. Xiao, W. L. Zhang, H. Ding, J. W. Chen, and Y. C. Zhou. Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors. Applied Physics Letters, 106 (1) (2015) 012901.

[40] Feng Yang, Fuwei Zhang, Guangda Hu, Zhihao Zong and Minghua Tang. Thickness-dependent ferroelectric behavior of predominantly (117)-oriented Bi3.15Nd0.85Ti3O12 thin-film capacitors. Applied Physics Letters, 106 (17) (2015) 172903.

[39] Songting Li, Jiancheng Li, Xiaochen Gu, Hongyi Wang, Cong Li, Jianfei Wu, and Minghua Tang. Reconfigurable all-band RF CMOS transceiver for GPS/GLONASS/Galileo/Beidou with digitally-assisted calibration. The IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23 (9) (2015) 1814-1827.

[38] X. Y. Xu, Y. Xiong, M. H. Tang*, Y. G. Xiao, S. A. Yan, W. L. Zhang, W. Zhao, H. X. Guo, Z. Li. Effects of drain-wall in mitigating N-hit single event transient via 45-nm CMOS process. Semiconductor Science and Technology, 30 (1) (2015) 015023.

[37] S. A. Yan, G. Li, W. Zhao, H. X. Guo, Y. Xiong, M. H. Tang*, Z. Li, Y. G. Xiao, W. L. Zhang, Z. F. Lei, and Y. C. Zhou. Ionizing radiation effect on metal-ferroelectric-insulator-semiconductor memory capacitors. Semiconductor Science and Technology, 30 (8) (2015) 085020.

[36] Xudong Wang, Jianlu Wang, Peng Wang, Weida Hu, Xiaohao Zhou, Nan Guo, Shuo Sun, Hong Shen, Tie Lin, Minghua Tang, Lei Liao, Anquan Jiang, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Wei Lu, Junhao Chu. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Advanced Materials, 27 (42) (2015) 6575-6581.

[35] D. L. Xu, Y. Xiong, M. H. Tang*, B. W. Zeng, and Y. G. Xiao. Bipolar and unipolar resistive switching mode in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory. Applied Physics Letters, 104 (18) (2014) 183501.

[34] Z. H. Tang, B. M. Wang, H. L. Yang, X. Y. Xu, Y. W. Liu, D. D. Sun, L. X. Xia, Q. F. Zhan, B. Chen, M. H. Tang*, Y. C. Zhou, J. L. Wang, and R. W. Li. Magneto-mechanical coupling effect in amorphous Co40Fe40B20 films grown on flexible substrates. Applied Physics Letters, 105 (10) (2014) 103504.

[33] D. L. Xu, Y. Xiong, M. H. Tang*, B. W. Zeng. Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films. Journal of Alloys and Compounds, 584 (2014) 269-272.

[32] S. A. Yan, Y. Xiong, M. H. Tang*, Z. Li, Y. G. Xiao, W. L. Zhang, W. Zhao, H. X. Guo, H. Ding, J. W. Chen, and Y. C. Zhou. Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor. Journal of Applied Physics, 115 (20) (2014) 204504.

[31] F. Liu, X. P. Ouyang, M. H. Tang*, Y. G. Xiao, B. Liu, X. B Zhang, Y. Feng, J. P. Zhang, and J. L. Liu. Scaling-induced enhancement of X-rays luminescence in CsI(Na) crystals. Applied Physics Letters, 102 (18) (2013) 181107.

[30] X. D. Wang, Y. Xiong, M. H. Tang*, L. Peng, Y. G. Xiao, X. Y. Xu, S. E. Liang, X. H. Zhong, and J. He. A Si tunnel field-effect transistor model with high switching current ratio and steep sub-threshold swing. Semiconductor Science and Technology, 29 (2014) 095016.

[29] Z. H. Tang, M. H. Tang*, X. S. Lv, H. Q. Cai, Y. G. Xiao, C. P. Cheng, Y. C. Zhou, and J. He. Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer, Journal of Applied Physics, 113 (16) (2013) 164106.

[28] Z. H. Tang, M. H. Tang*, J. Ouyang. Temperature dependence of magnetoelectric effect in Bi3.15Nd0.85Ti3O12-La0.7Ca0.3MnO3 multiferroic composite ?lms buffered by a LaNiO3 layer. Journal of Materials Chemistry C, 2 (8)(2014) 1427-1435.

[27] J. Q. Li, Y. Xiong, M. H. Tang*, H. X. Guo, W. Zhao, Y. G. Xiao, Z. H. Tang, S. A, Yan, W. L. Zhang, Y. C. Zhou, F. Yang, and J. He. Simulation of multi-level polarization in ferroelectric tunnel junctions. Physica Status Solidi B, 251 (2) (2014) 469-473.

[26] S. T. Li, J. C. Li, X. C. Gu, H. Y. Wang, M. H. Tang, and Z. W. Zhuang. A widely-tunable 5 dB-NF 90 dB-Gain 85 dB-DR CMOS TV receiver with digital-assisted calibration for multi-standard DBS application.IEEE Journal of Solid-State Circuits, 48 (11) (2013) 2762-2774.

[25] Y. G. Xiao, M. H. Tang*, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, and X. C. Gu. Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors. Applied Physics Letters, 100 (8) (2012) 083508.

[24] Y. G. Xiao, Y. Xiong, M. H. Tang*, J. C. Li, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, X. C. Gu, and Y. C. Zhou. Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors. Applied Physics Letters, 100 (17) (2012) 173504.

[23] Y. G. Xiao, Z. J. Chen, M. H. Tang*, Z. H. Tang, S. A. Yan, J. C. Li, X. C. Gu, Y. C. Zhou, and X. P. Ouyang. Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors. Applied Physics Letters, 101 (25) (2012) 253511.

[22] C. P. Cheng, M. H. Tang*, X. S. Lv, Z. H. Tang, Y. G. Xiao. Magnetoelectric couplling in La0.6Ca0.4MnO3-Bi3.4Nd0.6Ti3O12 composite thin films derived by a chemical solution deposition method. Applied Physics Letters, 101 (21) (2012) 212902.

[21] Z. J. Chen, Y. G. Xiao, M. H. Tang*, Y. Xiong, J. Q. Huang, J. C. Li, X. C. Gu, and Y. C. Zhou. Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs. IEEE Transactions on Electron Devices, 59 (12) (2012) 3292-3298.

[20] G. F. Xie, Y. Xiong, B. H. Li, Y. Zhu, J. C. Li, X. C. Gu, Y. G. Xiao, M. H. Tang*. Radiation damage effects by molecular dynamics simulation in BaTiO3 ferroelectric crystal. IEEE Transactions on Nuclear Science, 59 (4) (2012) 1731-1737.

[19] Y. G. Xiao, M. H. Tang*, J. C. Li, B. Jiang and J. He. The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. Microelectronics Reliability, 52 (4) (2012) 757-760.

[18] M. H. Tang*, B. Jiang, Y. G. Xiao, Z. Q. Zeng, Z. P. Wang, J. C. Li, and J. He. Top electrode-dependent resistance switching behavior of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate. Microelectronic Engineering, 93 (2012) 35-38.

[17] L. B. Zhang, M. H. Tang*, J. C. Li, Y. G Xiao. Effects of applied bias voltage in tunnel junctions with ferroelectric barrier. Solid State Electronics, 68 (2012) 8-12.

[16] Minghua Tang*, Xiaolei Xu, Zhi Ye, Yoshihiro Sugiyama, and Hiroshi Ishiwara. Impact of HfTaO buffer layer on data retention characteristics of ferroelectric-gate FET for nonvolatile memory applications.IEEE Transactions on Electron Devices, 58 (2) (2011) 370-375.

[15] J. Zhang, M. H. Tang* and J. He. Doping concentration and thickness effects in ferroelectric thin films. Applied Physics Letters, 96 (2010) 122905.

[14] L. B. Zhang, M. H. Tang*, J. C. Li, Y. G. Xiao, Z. Q. Zeng, Z. P. Wang, G. Y. Wang, S. B. Yang, X. L. Xu, B. Jiang and J. He. Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions. The European Physical Journal - Applied Physics, 55 (2011), 30601 (p1-p5).

[13] J. Sun, X. J. Zheng, W. Yin, M. H. Tang, and W. Li. Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity. Applied Physics Letters, 97 (2010) 242905.

[12] L. B. Zhang, M. H. Tang*, and F. Yang. Sixteen resistive states of a tunnel junction with a composite barrier. The European Physical Journal - Applied Physics, , 51 (2010) 10604 (p1-p5).

[11] M. H. Tang*, Z. H. Sun, Y. C. Zhou, Y. Sugiyama, H. Ishiwara. Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness. Applied Physics Letters, 94 (2009) 212907.

[10] M. H. Tang*, W. Shu, F. Yang, J. Zhang, G. J. Dong, J. W. Hou. Fabrication of La-substituted bismuth titanate nanofibers by electrospinning. Nanotechnology, 20 (38) (2009) 385602.

[9] F. Yang, Y. C. Zhou, M. H. Tang*, F. Liu, Y. Ma, X. J. Zheng, W. F. Zhao, H. Y. Xu and Z. H. Sun. Eight-logic memory cell based on multiferroic junctions. Journal of Physics D: Applied Physics, 42 (2009) 072004 (1-6).

[8] F. Yang, M. H. Tang*, Y. C. Zhou, F. Liu, Y. Ma, X. J. Zheng, J. X. Tang, H. Y. Xu, W. F. Zhao, Z. H. Sun, J. He. Fatigue mechanism of the ferroelectric perovskite thin films. Applied Physics Letters, 92 (2008) 022908.

[7] X. J. Zheng, J. Sun, J. J. Zhang, M H. Tang, W. Li. Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors. Applied Physics Letters, 93 (2008) 213501.

[6] Z. Ye, M. H. Tang*, Y. C. Zhou, X. J. Zheng, C. P. Cheng, Z. S. Hu, H. P. Hu. Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers. Applied Physics Letters, 90 (2007) 042902.

[5] Z. Ye, M. H. Tang*, Y. C. Zhou, X. J. Zheng, C. P. Cheng, Z. S. Hu, H. P. Hu. Electrical properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents. Applied Physics Letters, 90 (2007) 082905.

[4] F. Yang, M. H. Tang*, Y. C. Zhou, X. J. Zheng, F. Liu, J. X. Tang, J. J. Zhang, J. Zhang, and Chang Q. Sun. A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films. Applied Physics Letters, 91 (2007) 142902.

[3] J. Zhang, M. H. Tang*, J. X. Tang, F. Yang, H. Y. Xu, W. F. Zhao, X. J. Zheng, Y. C. Zhou, and J. He. Bilayer model of polarization offset of compositionally graded ferroelectric thin films. Applied Physics Letters, 91 (2007) 162908.

[2] F. Yang, M. H. Tang*, Z. Ye, Y. C. Zhou, X. J. Zheng, J. X. Tang, J. J. Zhang and J. He. Eight logic states of tunneling magneto-electroresistance in multiferroic tunnel junctions. Journal of Applied Physics, 102 (2007) 044504.

[1] X. J. Zheng, L. He, Y. C. Zhou and M. H. Tang. Effects of europium content on the microstructural and ferroelectric properties of Bi4-xEuxTi3O12 thin films. Applied Physics Letters, 89 (2006) 252908.

专利 

[1] 唐明华, 徐新宇, 燕少安, 张万里. 一种抗单粒子效应的N沟道场效应晶体管及其制作方法, 国家发明专利, 专利申请号: 201410427196.2, 中国, 2014.

[2] 唐明华, 李凯, 秦亚, 燕少安. 一种基于铁电场效应晶体管的差分放大电路, 国家发明专利, 专利申请号: 201510011376.7, 中国, 2015.

[3] 唐明华, 彭龙. 一种具有高开态电流的N型隧穿场效应晶体管及其制作方法, 国家发明专利, 专利申请号: 201510033256.7, 中国, 2015.

[4] 唐明华, 秦亚. 一种基于铁电场效应晶体管的电流灵敏放大器, 国家发明专利, 专利申请号: 201510084372.1, 中国, 2015.

[5] 唐明华, 陈毅华, 燕少安, 张万里. 一种P沟道场效应晶体管抗单粒子效应加固电路, 国家发明专利, 专利申请号: 201510792290.2, 中国, 2015.

[6] 唐明华, 钟兴宏. 一种低关态电流隧穿场效应晶体管, 国家发明专利, 专利申请号: 201510792258.4, 中国, 2015.

[7] 唐明华, 黄诚, 刘新, 冯艳华, 王震.一种基于SoC的无线智能程序加载方法及系统, 国家发明专利, 专利申请号: 201610139229.2, 中国, 2016.

[8] 唐明华, 梁赛儿, 杨黎. 一种应用于无源超高射频识别标签芯片的解调电路, 国家发明专利, 专利申请号: 201610267759.5, 中国, 2016.

[9] 肖永光, 王江, 马东坡, 唐明华. 一种提高PZT铁电薄膜负电容的方法, 国家发明专利, 专利申请号: 201610110669.5, 中国, 2016.

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