李正导师主页
基本信息
姓名: 李正
职称: 教授
单位电话: 073158298611
电子信箱: lizheng@xtu.edu.cn
办公室: 微电子材料与器件系
个人主页:
http://daoshi.xtu.edu.cn/index.php?id=1616
个人简介

李正:男,1958年11月出生于湖南省湘潭市。1977年以湖南省湘潭市全市第一名的成绩考入北京大学,1981年毕业于北京大学物理系,并以当年CUSPEA (China-U.S. Physics Examination and Application,李政道教授倡办的中美联合培养物理类研究生计划)到美国宾州大学(Penn. State Univ.)攻读博士学位,于1986年10月获得博士学位。1986年11月到美国Brookhaven国家实验室工作,任Physicist(相当于教授),领导世界上水平最高的硅高能粒子探测器模拟、设计、开发及制作和检测中心,主要从事于硅高能粒子探测器的研制和辐照缺陷的材料与器件物理的工作。在高级别学术刊物发表SCI收录论文300余篇,论文被引用6787次,其中他人正面引用5867次(截止日期2015年12月)。2005年获BNL Science and Technology奖,是CERN RD39 Collaboration发言人,2012年获美国电气与电子工程师协会(IEEE)颁发的2012年技术创新奖。分别被中国科学院半导体研究所材料科学开放实验室和湘潭大学聘请为客座教授和兼职教授。2014年2月12日正式受聘为湘潭大学国家“千人计划”特聘教授在湘潭大学材料科学与工程学院全职工作。

 

 

学习工作经历

2014.02 -         湘潭大学,材料科学与工程学院,国家“千人计划”特聘教授

1998.05 - 2014.02 湘潭大学,材料科学与工程学院,兼职教授

1998.01 -         中国科学院半导体研究所,兼职研究员

1993.01 - 2014.01  美国布鲁克海文国家实验室(Brookhaven National Lab) ,物理学家(相当于教授)

1990.01 - 1992.12  美国布鲁克海文国家实验室,副物理学家(相当于副教授)

1986.10 - 1989.12  美国布鲁克海文国家实验室,助理物理学家(相当于助理教授)

主讲课程

《微电子导论》(本科生)

 

研究方向

1.大面积、低漏电流硅探测器。开发了制作大面积、低漏电流硅探测器的先进工艺技术;

2.成功地研制了硅-Pad、Drift Pixel、Stripixel和3D-Trench-Electrode等不同结构的探测器与位敏传感器;

3.杂质工程对硅探测器的辐射加固;

4.TSC和DLTS测量深能级的统一理论。

获奖情况

李正,美国布洛克海文国家实验室科学和技术奖,2005年
李正,美国电气与电子工程师协会2012年技术创新奖,2012年

 

科研项目

1、973计划前期研究专项, 2012CB326404、 FeCMOS基本门电路的辐照效应及机理研究, 2012.08-2014.08,60万元、已结题、主持。

2、湖南省重点研发计划(2015GK2003),高性能压力传感器的研制及产业化,2015.01-2017.12,200万元,主持,在研。

 

主要代表性论文

 [1]3D design and electric simulation of a silicon drift detector using a spiral biasing adapter, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016, In Press

[2]3D simulations and modeling of new low capacitance silicon pixel detectors,Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016, In Press

[3]Processing of n+/p- /p+ strip detectors with atomic layer deposition(ALD) grown Al2O3 field insulator on magnetic Czochralski silicon(MCz-si) substrates,Nuclear Instruments and Methods in Physics Research A 828 (2016) 46–51

 [4]Modeling and simulation of charge collection properties for 3D-trench electrode detector[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015, 796: 29-33.

 [5]3D simulations of device performance for 3D-Trench electrode detector[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015, 796: 34-37.

 [6]Impact of Total Ionizing Dose Irradiation on Pt/SrBi2Ta2O9/HfO2/Si MemoryCapacitor,Applied Physics Letters,2015,106(1):012901-012906。

 [7]Impact of Total Ionizing Dose Irradiation on Electrical Property of Ferroelectric-Gate Field-Effect Transistor,Journal of AppliedPhysics,2014,115(20):204504-204510。

[8] Development of novel on-chip, customer-design spiral biasing adaptor on for Si drift detectors and detector arrays for X-ray and nuclear physics experiments[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2014

 [9]  Recent results of the 3D-stripixel Si detectors[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2014  

 [10]  A model of ferroelectric field-effect transistor after ionizing radiation[J]. Materials Science Forum, 2014, 787,247-255

 [11]  A double decoding scheme to improve the per performance of V2V communications[J]. IEEE Wireless Communications and Networking Conference, WCNC, 2013, 3838-3843

 [12]  A low-power, radiation-resistant ASIC for SDD-based X-ray spectrometers[J]. IEEE Transactions on Nuclear Science, 2013, 60  (4): 3057-3062

 [13]  Radiation damage effects in si materials and detectors[J]. Advanced Materials Research, 2013, 631, 216-226

 [14] Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013, 699, 1-8

 [15] Novel Si drift detectors arrays with customer-design, low current (low heat, low power) spiral biasing adapter and double-metal interconnections[J]. IEEE Nuclear Science Symposium Conference Record, 2012, 1339-1343 

 [16] Development of low-resistivity silicon drift detector arrays for soft X-rays[J]. IEEE Nuclear Science Symposium Conference Record, 2012,  931-935

 

[17] A low-power, radiation-resistant ASIC for SDD-based x-ray spectrometers[J]. IEEE Nuclear Science Symposium Conference Record, 2012,  371-375

 [18] Spectra distortion by the interstrip gap in specroscopic silicon strip detectors[J]. Journal of Instrumentation, 2012, 7(7)

 [19] Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems. IEEE Nuclear Science Symposium Conference Record, 2012

 [20] A. Novel Si sensors and readout for the compact high resolving power electromagnetic calorimeter[J]. IEEE Nuclear Science Symposium Conference Record, 2012

 [21] Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements[J]. Journal of Electronic Materials, 2012, 41(3): 488-493

 [22]  J/ψ production in proton-nucleus collisions at 158 and 400 GeV[J]. Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, 2012, 706(4): 263-267

 [23]  New BNL 3D-Trench electrode Si detectors for radiation hard detectors for sLHC and for X-ray applications[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 658(1): 90-97

 [24] On the feasibility of linear discrete-time systems of the green scheduling problem[J]. Proceedings - Real-Time Systems Symposium, 2011

 [25] Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 658,145-151

 [26] Silicon detectors for the sLHC[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 658(1): 11-16

 [27] A comparative measurement of Φ→K+K- and Φ→μ+μ- in In-In collisions at the CERN SPS[J]. Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, 2011, 699(5): 325-329

 [28] Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 636(1): 83-89

 [29] Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 636(1): 104-110

 [30] Development of n-on-p silicon sensors for very high radiation environments[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 636(1): 24-30

 [31] Development of n-on-p silicon sensors for very high radiation environments[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 636(1): 241-30

 [32] Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 636(1): 111-117

 [33] Point defects in CdZnTe crystals grown by different techniques[J]. Journal of Electronic Materials, 2011, 40(3): 274-279

 [34] The impact of neutral base region on the collected charge in heavily irradiated silicon detectors[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 624(2): 419-424

 [35] Arrays of silicon drift detectors for an extraterrestrial X-ray spectrometer[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 624(2): 260-264

 [36] Electric vehicles network with nomadic portablecharging stations[J]. IEEE Vehicular Technology Conference, 2010,

 [37] The development of a silicon-drift-detector-based X-ray spectrometer for remote surface analysis[J]. Proceedings of the 12th International Conference on Engineering, Science, Construction, and Operations in Challenging Environments - Earth and Space 2010, 2010, 1450-1458

 [38] Silicon vertex tracker for RHIC PHENIX experiment[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 623(1): 374-376

 [39] A simple orthogonal space-time coding scheme for asynchronous cooperative systems for frequency selective fading channels[J]. IEEE Transactions on Communications, 2010, 58(8): 2219-2224

 [40] Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 617(1): 552-557

 [41] Equal-double junctions in 24 GeV/c proton-irradiated MCZ n- and p-type Si detectors: A systematic transient current technique investigation[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 612(3): 539-548

 [42] Test beam results of a heavily irradiated Current Injected Detector (CID)[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 612(3): 488-492

 [43] 3D simulations of irradiated one-sided dual-column 3D silicon detector[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 612(3): 509-515

 

 


 

 

 

发明专利

李正,3D-Trench-Electrode Detectors,申请时间2010年10月15日,美国
李正,Spiral Biasing Adaptor for Use in Si Drift Detectors and Si Drift Detector Array, 2011年10月25日,美国,专利号: US9383452 B2 李正,一种具有低电容的硅像素探测器,发文日,20160704,专利号,201620260268.3
李正,一种低电容硅像素探测器,发文日,20160705,专利号,201620259382.4

李正,一种闭合式壳型电极硅探测器,发文日,20160801,专利号,201620361767.1

李正,应用六方形螺旋环分压器的硅漂移室探测器,发文日,20160803,专利号,201620338738.3